参数资料
型号: APTGF15X60BTP2
元件分类: IGBT 晶体管
英文描述: 25 A, 600 V, N-CHANNEL IGBT
封装: MODULE-24
文件页数: 3/4页
文件大小: 241K
代理商: APTGF15X60BTP2
APTGF15X60RTP2
APTGF15X60BTP2
A
PT
G
F1
5X
60
B
T
P2
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
600
V
Tj = 25°C
0.5
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
0.8
mA
Tj = 25°C
1.95
2.45
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 15A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.4 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
800
pF
Td(on)
Turn-on Delay Time
50
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 15A
RG = 67
30
ns
Td(on)
Turn-on Delay Time
50
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
270
Tf
Fall Time
40
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 15A
RG = 67
0.5
mJ
Tj = 25°C
1.25
1.7
VF
Forward Voltage
VGE = 0V
IF = 15A
Tj = 125°C
1.2
V
Tj = 25°C
1.2
Qrr
Reverse Recovery Charge
IF = 15A
VR = 300V
di/dt=550A/s
Tj = 125°C
2
C
IGBT
1.3
RthJC
Junction to Case
Diode
1.8
°C/W
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
3. Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3.3
N.m
Wt
Package Weight
185
g
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料
PDF描述
APTGF15X60BTP2G 25 A, 600 V, N-CHANNEL IGBT
APTGF165DA60D1G 230 A, 600 V, N-CHANNEL IGBT
APTGF165SK60D1 230 A, 600 V, N-CHANNEL IGBT
APTGF165SK60D1 230 A, 600 V, N-CHANNEL IGBT
APTGF180A60TG 220 A, 600 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APTGF15X60BTP2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF15X60RTP2 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
APTGF15X60RTP2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF165A60D1G 功能描述:IGBT NPT PHASE 600V 230A D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF165DA60D1 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost Chopper NPT IGBT Power Module