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参数资料
| 型号： | APTGF165A60D1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 230 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT PACKAGE-7 |
| 文件页数： | 1/4页 |
| 文件大小： | 178K |
| 代理商： | APTGF165A60D1G |
APTGF165A60D1G
APT
G
F165A60D1G
–
Rev
2
Decem
ber
,2009
www.microsemi.com
1- 4
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
230
IC
Continuous Collector Current
TC = 80°C
165
ICM
Pulsed Collector Current
TC = 25°C
400
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
781
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
400A@420V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
1
3
5
Q2
7
6
Q1
4
VCES = 600V
IC = 165A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M5 power connectors
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Phase leg
NPT IGBT Power Module
相关PDF资料 |
PDF描述 |
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| APTGF165DA60D1 | 230 A, 600 V, N-CHANNEL IGBT |
| APTGF165DA60D1 | 230 A, 600 V, N-CHANNEL IGBT |
| APTGF165SK60D1G | 230 A, 600 V, N-CHANNEL IGBT |
| APTGF180DH60G | 220 A, 600 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF165DA60D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost Chopper NPT IGBT Power Module |
| APTGF165DA60D1G | 功能描述:IGBT 600V 230A 730W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF165SK60D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module |
| APTGF165SK60D1G | 功能描述:IGBT 600V 230A 730W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF180A60D3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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