参数资料
型号: APTGF25H120T1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 40 A, 1200 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, SP1, 12 PIN
文件页数: 4/6页
文件大小: 236K
代理商: APTGF25H120T1G
CGY1032
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 February 2011
4 of 8
NXP Semiconductors
CGY1032
1 GHz, 32 dB gain GaAs push-pull amplifier
6.
Package outline
Fig 1.
Package outline SOT115J
UNIT
A2
max.
c
ee1
q
Q
max.
q1
q2
U2
U1
W
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
20.8
9.5
0.51
0.38
0.25 27.2
2.04
2.54
13.75 2.54 5.08 12.7 8.8
4.15
3.85
2.4
38.1 25.4 10.2 4.2
44.75
44.25
8.2
7.8
0.25
0.1
3.8
bF
p
6-32
UNC
y
w
0.7
x
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0
5
10 mm
scale
A
max.
D
max.
L
min.
E
max.
Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
U1
q
q2
q1
b
F
S
A
Z
p
E
A2
L
c
d
Q
U2
M
w
78
9
23
W
e
e1
5
p
1
d
x M B
y M B
B
04-02-04
10-06-18
y M B
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参数描述
APTGF25H120T2G 制造商:Microsemi Corporation 功能描述:MOD IGBT NPT 1200V 40V SP2
APTGF25H120T3 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge NPT IGBT Power Module
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