参数资料
型号: APTGF25H120T3G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 40 A, 1200 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, SP3, MODULE-25
文件页数: 6/6页
文件大小: 226K
代理商: APTGF25H120T3G
APTGF25H120T3G
APT
G
F25H120T
3G
Rev
2
M
ar
ch,
2009
www.microsemi.com
6- 6
Cies
Cres
Coes
10
100
1000
10000
0
1020
3040
50
C,
Capacitance
(p
F
)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Therm
al
Im
pedanc
e
(
°C/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0
102030
40
IC, Collector Current (A)
Operating Frequency vs Collector Current
F
m
ax,
O
p
e
rat
ing
Fr
e
q
u
e
ncy
(k
Hz
)
VCE = 600V
D = 50%
RG = 22
TJ = 125°C
TC= 75°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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