参数资料
型号: APTGF300DA120D3G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: IGBT
封装: ROHS COMPLIANT, D3, 11 PIN
文件页数: 5/5页
文件大小: 212K
代理商: APTGF300DA120D3G
APTGF300DA120D3G
APT
G
F300DA120D3G
Rev
0
Septem
ber
,2008
www.microsemi.com
5- 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
0
150
300
450
600
0
0.5
1
1.5
2
2.5
3
VF (V)
I F
(A)
ZCS
hard
switching
ZVS
0
10
20
30
40
50
60
70
0
100
200
300
400
IC (A)
Fm
ax,
Oper
at
ing
F
req
uenc
y
(kHz
)
VCE=600V
D=50%
RG=3.3
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rma
lImpe
d
a
nc
e
(
°C
/W
)
Diode
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF300DA120G 功能描述:IGBT NPT BOOST CHOP 1200V 400A S RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF300DU120 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source NPT IGBT Power Module
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APTGF300DU120G_07 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Dual Common Source NPT IGBT Power Module
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