参数资料
型号: APTGF300DU120G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 400 A, 1200 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, SP6, MODULE-7
文件页数: 5/5页
文件大小: 136K
代理商: APTGF300DU120G
APTGF300DU120G
APT
G
F300DU120G
Rev
3
november
,2007
www.microsemi.com
5- 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
0
100
200
300
400
500
600
00.511.522.5
3
VF (V)
IF
(
A
)
hard
switching
ZCS
ZVS
0
20
40
60
80
100
0
50
100 150 200 250 300 350
IC (A)
Fma
x
,Ope
ra
ting
Fre
que
nc
y
(k
H
z
)
VCE=600V
D=50%
RG=3
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(
°C
/W
)
Diode
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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