参数资料
型号: APTGF30X60P2G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 40 A, 600 V, N-CHANNEL IGBT
封装: MODULE-17
文件页数: 2/4页
文件大小: 238K
代理商: APTGF30X60P2G
APTGF30X60E2
APTGF30X60P2
A
PT
G
F3
0X
60
E
2(
P2
)–
R
ev
0
N
ov
em
be
r,
20
03
APT website – http://www.advancedpower.com
2 - 4
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
600
V
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1
mA
Tj = 25°C
1.95
2.45
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 30A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.7 mA
3
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
1300
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
100
pF
Td(on)
Turn-on Delay Time
30
Tr
Rise Time
6.5
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 6.8
12
ns
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
7
Td(off)
Turn-off Delay Time
85
Tf
Fall Time
18
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 6.8
0.8
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.25 1.6
VF
Diode Forward Voltage
IF = 30A
VGE = 0V
Tj = 125°C
1.2
V
ER
Reverse Recovery Energy
IF = 30A
VR = 300V
di/dt =800A/s
Tj = 125°C
0.9
mJ
Tj = 25°C
2.1
Qrr
Reverse Recovery Charge
IF = 30A
VR = 300V
di/dt =800A/s Tj = 125°C
3.3
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.9
RthJC
Junction to Case
Diode
1.4
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
2
3.5
N.m
Wt
Package Weight
185
g
相关PDF资料
PDF描述
APTGF350A60 430 A, 600 V, N-CHANNEL IGBT
APTGF350A60 430 A, 600 V, N-CHANNEL IGBT
APTGF350DA60 430 A, 600 V, N-CHANNEL IGBT
APTGF350DA60 430 A, 600 V, N-CHANNEL IGBT
APTGF500U60D4G 625 A, 600 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APTGF30X60RTP2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF30X60T3G 功能描述:IGBT MODULE NPT 2PH BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF330A60D3 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg NPT IGBT Power Module
APTGF330A60D3G 功能描述:IGBT NPT PHASE 600V 520A D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF330DA60D3G 功能描述:IGBT 600V 460A 1400W D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B