参数资料
型号: APTGF330A60D3
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 460 A, 600 V, N-CHANNEL IGBT
封装: MODULE-7
文件页数: 2/3页
文件大小: 177K
代理商: APTGF330A60D3
APTGF330A60D3
A
PT
G
F3
30
A
60
D
3
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 10 mA
600
V
Tj = 25°C
2
750
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1.5
mA
Tj = 25°C
2.0
2.5
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 400A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 8 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
18
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
1.6
nF
Td(on)
Turn-on Delay Time
165
Tr
Rise Time
40
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 400A
RG = 0.82
35
ns
Td(on)
Turn-on Delay Time
180
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
285
Tf
Fall Time
40
ns
Eoff
Turn off energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 400A
RG = 0.82
13
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 400A
VGE = 0V
Tj = 125°C
1.2
V
Er
Reverse Recovery Energy
IF = 400A
VR = 300V
di/dt =900A/s
Tj = 125°C
8.2
mJ
Tj = 25°C
24
Qrr
Reverse Recovery Charge
IF = 400A
VR = 300V
di/dt =900A/s Tj = 125°C
40
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
IGBT
0.089
RthJC
Junction to Case
Diode
0.15
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
For terminals
M6
3
5
Torque Mounting torque
To Heatsink
M6
3
5
N.m
Wt
Package Weight
380
g
相关PDF资料
PDF描述
APTGF330SK60D3 460 A, 600 V, N-CHANNEL IGBT
APTGF330SK60D3 460 A, 600 V, N-CHANNEL IGBT
APTGF350DU60 430 A, 600 V, N-CHANNEL IGBT
APTGF350DU60 430 A, 600 V, N-CHANNEL IGBT
APTGF350SK60 430 A, 600 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APTGF330A60D3G 功能描述:IGBT NPT PHASE 600V 520A D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF330DA60D3G 功能描述:IGBT 600V 460A 1400W D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF330SK60D3 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module
APTGF330SK60D3G 功能描述:IGBT 600V 460A 1400W D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF350A60 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR