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参数资料
| 型号： | APTGF50X120P2 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 72 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-17 |
| 文件页数： | 2/4页 |
| 文件大小： | 237K |
| 代理商： | APTGF50X120P2 |
APTGF50X120E2
APTGF50X120P2
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PT
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03
APT website – http://www.advancedpower.com
2 - 4
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
1200
V
Tj = 25°C
0.8
1
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
4
mA
Tj = 25°C
2.5
3.0
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 50A
Tj = 125°C
3.1
3.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 2 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
3300
Coes
Output Capacitance
500
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
220
pF
Td(on)
Turn-on Delay Time
44
100
Tr
Rise Time
56
100
Td(off)
Turn-off Delay Time
380
500
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 22
70
100
ns
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
2.3
2.8
VF
Diode Forward Voltage
IF = 50A
VGE = 0V
Tj = 125°C
1.8
V
trr
Reverse Recovery Time
IF = 50A
VR = 600V
di/dt =800A/s
Tj = 125°C
0.2
s
Tj = 25°C
2.8
Qrr
Reverse Recovery Charge
IF = 50A
VR = 600V
di/dt =800A/s Tj = 125°C
8
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.35
RthJC
Junction to Case
Diode
0.7
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
2
3.5
N.m
Wt
Package Weight
185
g
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF50X120E2 | 72 A, 1200 V, N-CHANNEL IGBT |
| APTGF50X120E2 | 72 A, 1200 V, N-CHANNEL IGBT |
| APTGF50X120P2 | 72 A, 1200 V, N-CHANNEL IGBT |
| APTGF50X120P2G | 72 A, 1200 V, N-CHANNEL IGBT |
| APTGF50X120E2G | 72 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF50X120TE3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60BTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF50X60BTP3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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