参数资料
型号: APTGF50X60E2
元件分类: IGBT 晶体管
英文描述: 70 A, 600 V, N-CHANNEL IGBT
封装: MODULE-17
文件页数: 1/4页
文件大小: 245K
代理商: APTGF50X60E2
APTGF50X60E2
APTGF50X60P2
A
PT
G
F5
0X
60
E
2(
P2
)–
R
ev
0
N
ov
em
be
r,
20
03
APT website – http://www.advancedpower.com
1 - 4
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
70
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
125
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
250
W
SCSOA Short Circuit Safe Operating Area
Tj = 125°C
225A@360V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pin out: APTGF50X60E2 (Long pins)
V
W
P+
11 12
9 10
7 8
U
N-
1 2 3 4 5 6
Pin out: APTGF50X60P2 (Short pins)
P+
W
V
U
N-
12
10
9
11
8
2
1
4
6
7
5
3
VCES = 600V
IC = 50A @ Tc = 80°C
Application
AC Motor control
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
相关PDF资料
PDF描述
APTGF50X60P2 70 A, 600 V, N-CHANNEL IGBT
APTGF50X60RTP3G 35 A, 600 V, N-CHANNEL IGBT
APTGF50X60RTP3 35 A, 600 V, N-CHANNEL IGBT
APTGF50X60BTP3 35 A, 600 V, N-CHANNEL IGBT
APTGF50X60RTP3 35 A, 600 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APTGF50X60E2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF50X60P2 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
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