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参数资料
| 型号： | APTGF90A60T |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-12 |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 代理商： | APTGF90A60T |
APTGF90A60T
A
PT
G
F90A
60T
–
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
2- 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 100A
600
V
Tj = 25°C
100
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1000
A
Tj = 25°C
2.0
2.5
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 90A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
3
5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20 V, VCE = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
4300
Coes
Output Capacitance
470
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
400
pF
Qg
Total gate Charge
330
Qge
Gate – Emitter Charge
290
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 90A
200
nC
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
150
Tf
Fall Time
30
ns
Eon
Turn-on Switching Energy
u
3.35
Eoff
Turn-off Switching Energy
v
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5
W
2.85
mJ
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
170
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
u
4.3
Eoff
Turn-off Switching Energy
v
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5
W
3.5
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
60
A
IF = 60A
1.6
1.8
IF = 120A
1.9
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
85
trr
Reverse Recovery Time
IF = 60A
VR = 400V
di/dt =400A/s
Tj = 125°C
160
ns
Tj = 25°C
260
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =400A/s
Tj = 125°C
1400
nC
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF90A60T | 110 A, 600 V, N-CHANNEL IGBT |
| APTGF90DA60D1 | 130 A, 600 V, N-CHANNEL IGBT |
| APTGF90DA60D1G | 130 A, 600 V, N-CHANNEL IGBT |
| APTGF90DA60D1 | 130 A, 600 V, N-CHANNEL IGBT |
| APTGF90DA60T3AG | 130 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF90A60T1G | 功能描述:POWER MOD IGBT NPT PHASE LEG SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90A60T3AG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Phase leg NPT IGBT Power Module Power Module |
| APTGF90A60TG | 功能描述:IGBT MODULE NPT PHASE LEG SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90DA60CT1G | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTGF90DA60D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost Chopper NPT IGBT Power Module |
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