- 您现在的位置：买卖IC网 > PDF目录51271 > APTGF90DH60T3G (MICROSEMI POWER PRODUCTS GROUP) 110 A, 600 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | APTGF90DH60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 204K |
| 代理商： | APTGF90DH60T3G |
APTGF90DH60T3G
APT
G
F90DH60T3G
–
Rev
0
Apr
il,
2009
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
2
2.5
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 100A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1.5mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
4.3
Cres
Reverse Transfer Capacitance
VGE = 0V ; VCE = 25V
f = 1MHz
0.4
nF
QG
Gate charge
VGE= 15V ; VCE=300V
IC=100A
240
nC
Td(on)
Turn-on Delay Time
25
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
130
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
20
ns
Td(on)
Turn-on Delay Time
25
Tr
Rise Time
11
Td(off)
Turn-off Delay Time
150
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
30
ns
Eon
Turn-on Switching Energy
Tj = 125°C
1
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
Tj = 125°C
3
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 10s ; Tj = 125°C
450
A
Diode ratings and characteristics (CR2 & CR3)
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
100
A
IF = 100A
1.6
2
IF = 200A
2
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.3
V
Tj = 25°C
160
trr
Reverse Recovery Time
Tj = 125°C
220
ns
Tj = 25°C
290
Qrr
Reverse Recovery Charge
IF = 100A
VR = 400V
di/dt =200A/s
Tj = 125°C
1530
nC
CR1 & CR4 are IGBT protection diodes only
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF90DSK60T3G | 110 A, 600 V, N-CHANNEL IGBT |
| APTGF90H60TG | 110 A, 600 V, N-CHANNEL IGBT |
| APTGF90H60T | 110 A, 600 V, N-CHANNEL IGBT |
| APTGF90H60T | 110 A, 600 V, N-CHANNEL IGBT |
| APTGF90SK60D1G | 130 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF90DH60TG | 功能描述:IGBT MODULE NPT ASYM BRIDGE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90DSK60T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Dual Buck chopper NPT IGBT Power Module |
| APTGF90DU60T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source NPT IGBT Power Module |
| APTGF90DU60TG | 功能描述:IGBT MODULE NPT DUAL SOURCE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90H60T3G | 功能描述:POWER MOD IGBT FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
发布紧急采购，3分钟左右您将得到回复。