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参数资料
| 型号： | APTGF90SK60TG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP4, MODULE-12 |
| 文件页数： | 5/6页 |
| 文件大小： | 287K |
| 代理商： | APTGF90SK60TG |
APTGF90SK60TG
A
P
T
G
F
90S
K
60T
G
–
R
ev
3
J
ul
y,
2006
www.microsemi.com
5 - 6
VGE = 15V
15
20
25
30
35
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
td
(o
n)
,Turn-
O
n
D
el
ay
Ti
m
e(
n
s
)
Turn-On Delay Time vs Collector Current
Tj = 25°C
VCE = 400V
RG = 5
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
100
150
200
250
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
td
(o
ff
),
T
u
rn
-Off
D
e
la
yT
im
e
(n
s)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 5
VGE=15V,
TJ=125°C
0
20
40
60
80
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
tr
,R
ise
T
im
e
(n
s)
Current Rise Time vs Collector Current
VCE = 400V
RG = 5
TJ = 25°C
TJ = 125°C
0
20
40
60
80
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
tf
,F
all
T
im
e(
n
s
)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 5
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
2
4
6
8
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
E
on
,Turn
-O
n
E
n
er
gy
Los
s
(
m
J)
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 5
TJ= 25°C
TJ = 125°C
0
1
2
3
4
5
6
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
E
of
f,
Turn-
of
fE
n
er
g
yLos
s(
m
J)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 5
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
Eon, 45A
Eoff, 45A
0
4
8
12
16
0
10203040
50
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
it
ch
in
g
E
n
e
rg
y
L
o
ss
es
(
m
J)
VCE = 400V
VGE = 15V
TJ= 125°C
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
Eon, 45A
Eoff, 45A
0
2
4
6
8
10
0
255075
100
125
TJ, Junction Temperature (°C)
S
w
it
c
h
ing
E
n
e
rgy
Lo
ss
e
s(
m
J
)
Switching Energy Losses vs Junction Temp.
VCE = 400V
VGE = 15V
RG = 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF90TA60P | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Triple phase leg NPT IGBT Power Module |
| APTGF90TA60PG | 功能描述:IGBT MODULE NPT TRPL PHASE SP6P RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90TDU60P | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Triple dual Common Source NPT IGBT Power Module |
| APTGF90TDU60PG | 功能描述:IGBT MODULE NPT TRPLE DUAL SP6P RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90VDA60T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Dual Boost chopper NPT IGBT Power Module |
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