参数资料
型号: APTGF90X60E3
厂商: Advanced Power Technology Ltd.
英文描述: 3 Phase bridge NPT IGBT Power Module
中文描述: 3相桥不扩散核武器条约IGBT功率模块
文件页数: 1/3页
文件大小: 179K
代理商: APTGF90X60E3
APTGF90X60E3
A
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
130
90
230
±20
430
200A@520V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
13
14
17
19
15
8
9
11
10
12
21
20
5 6
3 4
1 2
7
V
CES
= 600V
I
C
= 90A @ Tc = 80°C
Application
Features
AC Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
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