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参数资料
| 型号： | APTGL475U120D4G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 封装： | ROHS COMPLIANT, D4, 5 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 197K |
| 代理商： | APTGL475U120D4G |
APTGL475U120D4G
APT
G
L
475U120D
4G
–
Rev
0
July,
2008
www.microsemi.com
1- 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
610
IC
Continuous Collector Current
TC = 80°C
475
ICM
Pulsed Collector Current
TC = 25°C
1200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
2082
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
800A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
3
5
2
1
VCES = 1200V
IC = 475A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT 4 Technology
-
Low voltage drop
-
Low leakage current
-
Low switching losses
-
Soft recovery parallel diodes
-
Low diode VF
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Single switch
Trench + Field Stop IGBT4
Power Module
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGL475U120DAG | 功能描述:POWER MOD IGBT4 SER DIODE SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGL60A120T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Phase leg Trench + Field Stop IGBT4 Power module |
| APTGL60DDA120T3G | 功能描述:IGBT4 MODULE TRENCH 1200V SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGL60DH120T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT4 Power module |
| APTGL60DSK120T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 80A SP3 |
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