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参数资料
| 型号： | APTGS15X120BTP2 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| 中文描述： | 输入整流桥桥制动三相IGBT功率模块不扩散核武器条约 |
| 文件页数： | 3/4页 |
| 文件大小： | 189K |
| 代理商： | APTGS15X120BTP2 |
APTGS15X120RTP2
APTGS15X120BTP2
A
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V
V
CE
= 1200V
V
GE
=15V
I
C
= 15A
V
GE
= V
CE
, I
C
= 0.6 mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 15A
R
G
= 47
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 15A
R
G
= 47
Min
1200
4.5
Typ
1
1.2
2.2
2.5
5.5
Max
500
2.55
6.5
300
Unit
V
μA
mA
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
C
ies
Input Capacitance
1000
pF
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
65
65
370
50
66
55
410
55
1.7
1.75
1.6
1.6
ns
ns
mJ
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
2.1
V
F
Forward Voltage
V
GE
= 0V
I
F
= 15A
I
F
= 15A
V
R
= 600V
di/dt=
900
A/μs
V
Q
rr
Reverse Recovery Charge
T
j
= 125°C
IGBT
Diode
3.2
μC
0.7
1.2
R
thJC
Junction to Case
°C/W
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
k
K
=
T
T
B
R
R
T
1
1
exp
25
50
/
25
25
3.
Thermal and package characteristics
Symbol Characteristic
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
T
J
Operating junction temperature range
T
STG
Storage Temperature Range
T
C
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
Min
Typ
Max
Unit
V
ISOL
2500
V
-40
-40
-40
150
125
125
3.3
185
°C
To Heatsink
M5
N.m
g
T: Thermistor temperature
R
T
: Thermistor value at T
相关PDF资料 |
PDF描述 |
|---|---|
| APTGS15X120RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS25X120BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS25X120RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGT100A120D1 | Phase leg Trench IGBT Power Module |
| APTGT100A170D1 | Phase leg Trench IGBT Power Module |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGS15X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS15X120RTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS15X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS25X120BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS25X120RTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
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