参数资料
型号: APTGS75X170E3
元件分类: IGBT 晶体管
英文描述: 150 A, 1700 V, N-CHANNEL IGBT
封装: MODULE-33
文件页数: 1/3页
文件大小: 210K
代理商: APTGS75X170E3
APTGS75X170E3
A
PT
G
S7
5X
17
0E
3
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
13
14
17
19
15
8
9
11
10
12
21
20
5 6
3 4
1 2
7
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
V
TC = 25°C
150
IC
Continuous Collector Current
TC = 80°C
75
ICM
Pulsed Collector Current
TC = 25°C
250
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
625
W
RBSOA Reverse Bias Operating Area
Tj = 125°C
150A@1600V
VCES = 1700V
IC = 75A @ Tc = 80°C
Application
AC Motor control
Features
Non Punch Through (NPT) Low Loss IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
相关PDF资料
PDF描述
APTGS75X170E3 150 A, 1700 V, N-CHANNEL IGBT
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