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参数资料
| 型号： | APTGT100A60T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 275K |
| 代理商： | APTGT100A60T1G |
APTGT100A60T1G
APTGT100A60T1
G
–
Re
v0
Augus
t,2007
www.microsemi.com
1 – 5
9
Q2
Q1
10
12
2
1
7
8
11
3
4
CR1
CR2
56
NTC
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
150 *
IC
Continuous Collector Current
TC = 80°C
100 *
ICM
Pulsed Collector Current
TC = 25°C
200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
340
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
200A @ 550V
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 100A* @ Tc = 80°C
相关PDF资料 |
PDF描述 |
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| APTGT100A60T | 150 A, 600 V, N-CHANNEL IGBT |
| APTGT100A60T | 150 A, 600 V, N-CHANNEL IGBT |
| APTGT100DA120T | 140 A, 1200 V, N-CHANNEL IGBT |
| APTGT100DA120T | 140 A, 1200 V, N-CHANNEL IGBT |
| APTGT100DA170D1 | 200 A, 1700 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT100A60T3AG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Phase leg Trench + Field Stop IGBT Power Module |
| APTGT100A60TG | 功能描述:IGBT MODULE TRENCH PH LEG SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT100BB60T3G | 功能描述:POWER MOD IGBT3 BOOST BUCK SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT100DA120D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost chopper Trench IGBT Power Module |
| APTGT100DA120D1G | 功能描述:IGBT 1200V 150A 520W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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