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参数资料
| 型号： | APTGT100DA170D1 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Boost chopper Trench IGBT Power Module |
| 中文描述： | 升压斩波沟道IGBT功率模块 |
| 文件页数： | 2/3页 |
| 文件大小： | 154K |
| 代理商： | APTGT100DA170D1 |
APTGT100DA170D1
A
APT website – http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 4mA
V
GE
= 0V, V
CE
= 1700V
V
GE
= 15V
I
C
= 100A
V
GE
= V
CE
, I
C
= 4 mA
V
GE
= 20V, V
CE
= 0V
Min
1700
5.2
Typ
2.0
2.4
5.8
Max
3
2.4
6.4
200
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn Off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 100A
R
G
= 15
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 100A
R
G
= 15
Min
Typ
8.5
0.3
250
100
850
120
300
100
1000
200
32
Max
Unit
nF
ns
ns
mJ
Test Conditions
I
F
= 100A
V
GE
= 0V
I
F
= 100A
V
R
= 900V
di/dt =900A/μs
I
F
= 100A
V
= 900V
di/dt =900A/μs T
j
= 125°C
Min
Typ
1.8
1.9
12
Max
2.2
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
T
j
= 25°C
25
mJ
25
Q
rr
Reverse Recovery Charge
43
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.18
0.3
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
3500
V
T
J
T
STG
T
C
-40
-40
-40
2
3
150
125
125
3.5
5
180
°C
For terminals
To Heatsink
M5
M6
Torque Mounting torque
N.m
Wt
Package Weight
g
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| APTGT100H60T | Full - Bridge Trench + Field Stop IGBT Power Module |
| APTGT100SK120D1 | Buck chopper Trench IGBT Power Module |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT100DA170D1G | 功能描述:IGBT 1700V 200A 695W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT100DA170DG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT100DA170T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost chopper Trench + Field Stop IGBT Power Module |
| APTGT100DA170TG | 功能描述:IGBT 1700V 150A 560W SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT100DA60T1G | 功能描述:IGBT BOOST CHOP 600V 150A SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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