参数资料
型号: APTGT100SK120T
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 140 A, 1200 V, N-CHANNEL IGBT
封装: MODULE-12
文件页数: 1/5页
文件大小: 278K
代理商: APTGT100SK120T
APTGT100SK120T
A
P
T
G
T
100
S
K
120T
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
0/VBUS
NT C1
OUT
Q1
VBUS
NT C2
0/VBUS SENSE
G1
E1
NTC2
OUT
E1
NTC1
VBUS
0/VBUS
SENSE
0/VBUS
SENSE
0/VBUS
G1
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
140
IC
Continuous Collector Current
TC= 80°C
100
ICM
Pulsed Collector Current
TC= 25°C
200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
480
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
200A @ 1100V
VCES = 1200V
IC = 100A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Fast Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Buck chopper
Fast Trench + Field Stop IGBT
Power Module
相关PDF资料
PDF描述
APTGT100SK60T 150 A, 600 V, N-CHANNEL IGBT
APTGT100SK60T 150 A, 600 V, N-CHANNEL IGBT
APTGT150DA120T 220 A, 1200 V, N-CHANNEL IGBT
APTGT150DA120T 220 A, 1200 V, N-CHANNEL IGBT
APTGT150DA120 220 A, 1200 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APTGT100SK120TG 功能描述:IGBT 1200V 140A 480W SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGT100SK170D1 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module
APTGT100SK170D1G 功能描述:IGBT 1700V 200A 695W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGT100SK170DG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT100SK170T 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper Trench + Field Stop IGBT Power Module