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参数资料
| 型号： | APTGT100X120E3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge Trench IGBT Power Module |
| 中文描述： | 3相桥沟道IGBT功率模块 |
| 文件页数： | 2/3页 |
| 文件大小： | 194K |
| 代理商： | APTGT100X120E3 |
APTGT100X120E3
A
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
All ratings @ T
j
= 25°C unless otherwise specified
Test Conditions
V
GE
= 0V, I
C
= 5mA
V
GE
= 0V, V
CE
= 1200V
T
j
= 25°C
V
GE
=15V
I
C
= 100A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 4 mA
V
GE
= 20V, V
CE
= 0V
Min
1200
1.4
5.0
Typ
1.7
2.0
Max
5
2.1
6.5
400
Unit
V
mA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
Min
Typ
7200
400
300
260
30
420
70
290
45
520
90
12
Max
Unit
pF
ns
ns
mJ
Test Conditions
I
F
= 100A
V
GE
= 0V
I
F
= 100A
V
R
= 600V
di/dt =900A/μs
I
F
= 100A
V
= 600V
di/dt =900A/μs T
j
= 125°C
Min
Typ
1.6
1.6
5
Max
2.1
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
T
j
= 25°C
9
mJ
10
Q
rr
Reverse Recovery Charge
19
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.26
0.48
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
2500
V
T
J
T
STG
T
C
-40
-40
-40
3
150
125
125
4.5
300
°C
To Heatsink
M5
N.m
g
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT100X120E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT100X120TE3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge Trench IGBT Power Module |
| APTGT100X120TEG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150A120 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module |
| APTGT150A1202G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 220A SP2 |
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