参数资料
型号: APTGT100X120E3
元件分类: IGBT 晶体管
英文描述: 140 A, 1200 V, N-CHANNEL IGBT
封装: MODULE-33
文件页数: 1/3页
文件大小: 225K
代理商: APTGT100X120E3
APTGT100X120E3
A
PT
G
T
10
0X
12
0E
3
R
ev
0
Ju
ly
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00
3
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
13
14
17
19
15
8
9
11
10
12
21
20
5 6
3 4
1 2
7
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
140
IC
Continuous Collector Current
TC = 80°C
100
ICM
Pulsed Collector Current
TC = 25°C
280
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
480
W
RBSOA Reverse Bias Operating Area
Tj = 125°C
200A@1100V
VCES = 1200V
IC = 100A @ Tc = 80°C
Application
AC Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
Trench IGBT Power Module
相关PDF资料
PDF描述
APTGT100X120TE3 140 A, 1200 V, N-CHANNEL IGBT
APTGT100X120TE3 140 A, 1200 V, N-CHANNEL IGBT
APTGT150A120D1 220 A, 1200 V, N-CHANNEL IGBT
APTGT150A120D1 220 A, 1200 V, N-CHANNEL IGBT
APTGT150A120T3AG 220 A, 1200 V, N-CHANNEL IGBT
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