- 您现在的位置：买卖IC网 > PDF目录369366 > APTGT150A120 (Advanced Power Technology Ltd.) Phase leg Fast Trench + Field Stop IGBT Power Module PDF资料下载
参数资料
| 型号： | APTGT150A120 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Phase leg Fast Trench + Field Stop IGBT Power Module |
| 中文描述： | 相脚快速戴场站IGBT功率模块 |
| 文件页数： | 5/5页 |
| 文件大小： | 278K |
| 代理商： | APTGT150A120 |
APTGT150A120
A
APT website – http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25°C
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
50
100
150
200
250
300
0
0.4
0.8
1.2
V
F
(V)
1.6
2
2.4
I
C
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
0
40
80
120
I
C
(A)
160
200
240
F
V
CE
=600V
D=50%
R
G
=2.2
T
J
=125°C
T
c
=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT150A170 | Phase leg Trench + Field Stop IGBT Power Module |
| APTGT150DH170 | Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
| APTGT150DU120T | Dual common source Fast Trench + Field Stop IGBT Power Module |
| APTGT150DU120 | Dual common source Fast Trench + Field Stop IGBT Power Module |
| APTGT150DU170 | Dual common source Trench + Field Stop IGBT Power Module |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT150A1202G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 220A SP2 |
| APTGT150A120D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
| APTGT150A120D1G | 功能描述:IGBT MODULE TRENCH PHASE LEG D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT150A120D3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
| APTGT150A120D3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。