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参数资料
| 型号： | APTGT150SK120D3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 220 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 2/3页 |
| 文件大小： | 200K |
| 代理商： | APTGT150SK120D3 |
APTGT150SK120D3
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APT website – http://www.advancedpower.com
2 - 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 6mA
1200
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
4
mA
Tj = 25°C
1.7
2.1
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 150A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 6mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
10.7
Coes
Output Capacitance
0.56
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.5
nF
Td(on)
Turn-on Delay Time
280
Tr
Rise Time
90
Td(off)
Turn-off Delay Time
550
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2
130
ns
Td(on)
Turn-on Delay Time
290
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
650
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2
180
ns
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 150A
VGE = 0V
Tj = 125°C
1.6
V
Erec
Reverse Recovery Energy
IF = 150A
VR = 600V
di/dt =900A/s
Tj = 125°C
12
mJ
Tj = 25°C
14
Qrr
Reverse Recovery Charge
IF = 150A
VR = 600V
di/dt =900A/s Tj = 125°C
28
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.18
RthJC
Junction to Case
Diode
0.30
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
For terminals
M6
3
5
Torque Mounting torque
To Heatsink
M6
3
5
N.m
Wt
Package Weight
380
g
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT150SK120T | 220 A, 1200 V, N-CHANNEL IGBT |
| APTGT150SK120T | 220 A, 1200 V, N-CHANNEL IGBT |
| APTGT150SK120 | 220 A, 1200 V, N-CHANNEL IGBT |
| APTGT150SK120 | 220 A, 1200 V, N-CHANNEL IGBT |
| APTGT150SK170D1 | 280 A, 1700 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT150SK120DY | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150SK120G | 功能描述:IGBT 1200V 220A 690W SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT150SK120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper Fast Trench + Field Stop IGBT Power Module |
| APTGT150SK120TG | 功能描述:IGBT 1200V 220A 690W SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT150SK170 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper Trench + Field Stop IGBT Power Module |
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