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参数资料
| 型号： | APTGT150SK170 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Buck chopper Trench + Field Stop IGBT Power Module |
| 中文描述： | 降压斩波器沟槽场站IGBT功率模块 |
| 文件页数： | 2/5页 |
| 文件大小： | 278K |
| 代理商： | APTGT150SK170 |
APTGT150SK170
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, V
CE
= 1700V
V
GE
= 15V
I
C
= 150A
V
GE
= V
CE
, I
C
= 3mA
V
GE
= 20V, V
CE
= 0V
Min
5.0
Typ
2.0
2.4
5.8
Max
350
2.4
6.5
600
Unit
μA
T
j
= 25°C
T
j
= 125°C
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 150A
R
G
= 4.7
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 150A
R
G
= 4.7
Min
Typ
13.5
0.55
0.44
370
40
650
180
400
50
800
300
48
47
Max
Unit
nF
ns
ns
mJ
Test Conditions
Min
1700
Typ
150
1.8
1.9
385
490
40
64
Max
350
600
2.2
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1700V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
A
V
F
Diode Forward Voltage
I
F
= 150A
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 150A
V
R
= 900V
di/dt =1600A/μs
μC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT150SK170D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module |
| APTGT150SK170D1G | 功能描述:IGBT 1700V 280A 780W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT150SK170D3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module |
| APTGT150SK170D3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150SK170G | 功能描述:IGBT 1700V 250A 890W SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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