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参数资料
| 型号： | APTGT200DU60T |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Dual common source Trench + Field Stop IGBT Power Module |
| 中文描述： | 双共源戴场站IGBT功率模块 |
| 文件页数： | 1/5页 |
| 文件大小： | 287K |
| 代理商： | APTGT200DU60T |
APTGT200DU60T
A
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C2
Q2
NTC1
Q1
E
C1
E1
G1
NTC2
E2
G2
C1
C2
C2
NTC2
NTC1
E1
E
G2
E2
G2
E2
G1
Parameter
Max ratings
600
290
200
400
±20
625
400A @ 550V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 150°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
A
V
W
V
CES
= 600V
I
C
= 200A @ Tc = 80°C
Application
Features
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Dual common source
Trench + Field Stop IGBT
Power Module
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT200H120 | Full - Bridge Fast Trench + Field Stop IGBT Power Module |
| APTGT200H60 | Full - Bridge Trench + Field Stop IGBT Power Module |
| APTGT200SK120D3 | Buck chopper Trench IGBT Power Module |
| APTGT200SK120 | Buck chopper Fast Trench + Field Stop IGBT Power Module |
| APTGT200SK60T | Buck chopper Trench + Field Stop IGBT Power Module |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT200DU60TG | 功能描述:POWER MOD IGBT TRENCH DL SRC SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT200H120 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Fast Trench + Field Stop IGBT Power Module |
| APTGT200H120G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT200H60 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Trench + Field Stop IGBT Power Module |
| APTGT200H60G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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