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参数资料
| 型号： | APTGT200SK170D3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 400 A, 1700 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 2/5页 |
| 文件大小： | 213K |
| 代理商： | APTGT200SK170D3G |
APTGT200SK170D3G
APT
G
T
200SK170
D3G
–
Rev
1
Septem
ber
,2008
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
3
mA
Tj = 25°C
2.0
2.5
VCE(on)
Collector Emitter on Voltage
VGE = 15V
IC = 200A
Tj = 125°C
2.4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 8 mA
5.2
5.8
6.4
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
18
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
0.6
nF
QG
Gate charge
VGE=±15V, IC=200A
VCE=900V
2.3
C
Td(on)
Turn-on Delay Time
280
Tr
Rise Time
80
Td(off)
Turn-off Delay Time
850
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω
120
ns
Td(on)
Turn-on Delay Time
300
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
1000
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω
200
ns
Tj = 25°C
58
Eon
Turn On Energy
Tj = 125°C
78
Tj = 25°C
43
Eoff
Turn Off Energy
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω
Tj = 125°C
63
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 1000V
tp ≤ 10s ; Tj = 125°C
800
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
750
IRRM
Maximum Reverse Leakage Current
VR=1700V
Tj = 125°C
1000
A
IF
DC Forward Current
Tc = 80°C
200
A
Tj = 25°C
1.8
2.2
VF
Diode Forward Voltage
IF = 200A
Tj = 125°C
1.9
V
Tj = 25°C
385
trr
Reverse Recovery Time
Tj = 125°C
490
ns
Tj = 25°C
56
Qrr
Reverse Recovery Charge
Tj = 125°C
92
C
Tj = 25°C
24
Err
Reverse Recovery Energy
IF = 200A
VR = 900V
di/dt =3200A/s
Tj = 125°C
48
mJ
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相关代理商/技术参数 |
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| APTGT200SK60T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper Trench + Field Stop IGBT Power Module |
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| APTGT200TL60G | 功能描述:POWER MODULE IGBT 600V 200A SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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