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参数资料
| 型号： | APTGT200TL60G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 300 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP6, 12 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 220K |
| 代理商： | APTGT200TL60G |
APTGT200TL60G
APT
G
T
200T
L
60G
–
Rev0
M
ar
ch,
2009
www.microsemi.com
3- 7
CR1 to CR4 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
400
A
IF
DC Forward Current
Tc = 80°C
150
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 150A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 150°C
150
ns
Tj = 25°C
7.2
Qrr
Reverse Recovery Charge
Tj = 150°C
15.2
C
Tj = 25°C
1.7
Err
Reverse Recovery Energy
IF = 150A
VR = 300V
di/dt =2800A/s
Tj = 150°C
3.6
mJ
RthJC
Junction to Case Thermal Resistance
0.52
°C/W
CR5 & CR6 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
400
A
IF
DC Forward Current
Tc = 80°C
200
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 200A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
125
trr
Reverse Recovery Time
Tj = 150°C
220
ns
Tj = 25°C
9.4
Qrr
Reverse Recovery Charge
Tj = 150°C
19.8
C
Tj = 25°C
2.2
Err
Reverse Recovery Energy
IF = 200A
VR = 300V
di/dt =2800A/s
Tj = 150°C
4.8
mJ
RthJC
Junction to Case Thermal Resistance
0.39
°C/W
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
175
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
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