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参数资料
| 型号： | APTGT20H60T3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Trench + Field Stop IGBT Power Module |
| 中文描述： | 全-桥戴场站IGBT功率模块 |
| 文件页数： | 2/5页 |
| 文件大小： | 294K |
| 代理商： | APTGT20H60T3 |
APTGT20H60T3
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
V
GE
=15V
I
C
= 20A
V
GE
= V
CE
, I
C
= 300μA
V
GE
= 20V, V
CE
= 0V
250
1.9
6.5
300
μA
T
j
= 25°C
T
j
= 150°C
1.5
1.7
5.8
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
5.0
V
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
C
ies
C
oes
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
1100
70
35
110
45
200
40
120
50
250
60
0.35
0.7
V
GE
= 0V
V
CE
= 25V
f = 1MHz
pF
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 20A
R
G
= 18
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 20A
R
G
= 18
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
600
Typ
20
1.6
1.5
120
210
1.1
2.3
Max
250
500
2
Unit
V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 20A
V
GE
= 0V
A
V
V
F
Diode Forward Voltage
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 20A
V
R
= 300V
di/dt =1600A/μs
μC
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相关代理商/技术参数 |
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| APTGT20H60T3G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT20TL601G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGT20TL60T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Three level inverter Trench + Field Stop IGBT Power Module |
| APTGT20X60T3G | 功能描述:IGBT MODULE TRENCH 3PH BRDG SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT225A170 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Trench + Field Stop IGBT Power Module |
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