- 您现在的位置：买卖IC网 > PDF目录369367 > APTGT35SK120D1 (Advanced Power Technology Ltd.) Buck chopper Trench IGBT Power Module PDF资料下载
参数资料
| 型号： | APTGT35SK120D1 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Buck chopper Trench IGBT Power Module |
| 中文描述： | 降压斩波沟道IGBT功率模块 |
| 文件页数： | 1/3页 |
| 文件大小： | 153K |
| 代理商： | APTGT35SK120D1 |
APTGT35SK120D1
A
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
55
35
70
±20
205
70A@1200V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Safe Operation Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
2
1
5
Q1
3
4
6
7
5
4
3
2
1
V
CES
= 1200V
I
C
= 35A @ Tc = 80°C
Application
Features
AC and DC motor control
Switched Mode Power Supplies
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Buck chopper
Trench IGBT
Power Module
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT35X120BTP3 | Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT35X120RTP3 | Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT400U120D4 | Single switch Trench IGBT Power Module |
| APTGT50A120D1 | Phase leg Trench IGBT Power Module |
| APTGT75A120D1 | Phase leg Trench IGBT Power Module |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT35SK120D1G | 功能描述:IGBT 1200V 55A 205W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT35X120BTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT35X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT35X120RTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT35X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。