参数资料
型号: APTGT35X120BTP3
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 40 A, 1200 V, N-CHANNEL IGBT
封装: MODULE-35
文件页数: 1/4页
文件大小: 269K
代理商: APTGT35X120BTP3
APTGT35X120RTP3
APTGT35X120BTP3
A
PT
G
T
35
X
12
0B
T
P3
R
ev
1
D
ec
em
be
r,
20
03
APT website – http://www.advancedpower.com
1 - 4
All ratings @ Tj = 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VRRM
Repetitive Peak Reverse Voltage
1600
V
ID
DC Forward Current
TC = 80°C
80
Tj = 25°C
320
IFSM
Surge Forward Current
tp = 10ms
Tj = 150°C
260
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APTGT35X120RTP3: Without Brake (Pin 7 & 14 not connected)
9
8
7
4
5
6
22
23
24
1
2
3
17
18
19
20
10
11
12
14 13
16 15
21
VCES = 1200V
IC = 35A @ Tc = 80°C
Application
AC Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Input rectifier bridge + Brake
+ 3 Phase Bridge
Trench IGBT Power Module
相关PDF资料
PDF描述
APTGT35X120RTP3G 40 A, 1200 V, N-CHANNEL IGBT
APTGT35X120RTP3 40 A, 1200 V, N-CHANNEL IGBT
APTGT35X120BTP3G 40 A, 1200 V, N-CHANNEL IGBT
APTGT400DA120 500 A, 1200 V, N-CHANNEL IGBT
APTGT400DA120 500 A, 1200 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
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