参数资料
型号: APTGT400SK120
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 500 A, 1200 V, N-CHANNEL IGBT
封装: MODULE-5
文件页数: 1/5页
文件大小: 270K
代理商: APTGT400SK120
APTGT400SK120
A
P
T
G
T
400
S
K
120
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q1
G1
0/VBUS
OUT
E1
CR2
VBUS
OUT
0/VBUS
E1
G1
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
560 *
IC
Continuous Collector Current
TC= 80°C
400
ICM
Pulsed Collector Current
TC= 25°C
800
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
1785
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
800A @ 1100V
VCES = 1200V
IC = 400A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Fast Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Buck chopper
Fast Trench + Field Stop IGBT
Power Module
相关PDF资料
PDF描述
APTGT400SK120 500 A, 1200 V, N-CHANNEL IGBT
APTGT400U170D4 800 A, 1700 V, N-CHANNEL IGBT
APTGT400U170D4 800 A, 1700 V, N-CHANNEL IGBT
APTGT450DA60 550 A, 600 V, N-CHANNEL IGBT
APTGT450DA60 550 A, 600 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APTGT400SK120D3G 功能描述:IGBT 1200V 580A 2100W D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGT400SK120G 功能描述:IGBT 1200V 560A 1785W SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGT400SK60D3G 功能描述:IGBT 600V 500A 1250W D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGT400SK60D3G_11 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Buck Chopper Trench Field Stop IGBT3 Power Module
APTGT400TL65G 功能描述:IGBT 650V SP6C 制造商:microsemi corporation 系列:* 零件状态:有效 标准包装:1