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参数资料
| 型号： | APTGT450SK60 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 550 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-5 |
| 文件页数： | 2/5页 |
| 文件大小： | 268K |
| 代理商： | APTGT450SK60 |
APTGT450SK60
A
P
T
G
T
450
S
K
60
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
500
A
Tj = 25°C
1.4
1.8
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 450A
Tj = 150°C
1.5
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
37
Coes
Output Capacitance
2.3
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
1.1
nF
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
55
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 450A
RG = 2.2
60
ns
Td(on)
Turn-on Delay Time
145
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
320
Tf
Fall Time
80
ns
Eon
Turn on Energy
7.8
Eoff
Turn off Energy
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 450A
RG = 2.2
15.7
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
500
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
750
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
450
A
Tj = 25°C
1.5
1.9
VF
Diode Forward Voltage
IF = 450A
VGE = 0V
Tj = 150°C
1.4
V
Tj = 25°C
125
trr
Reverse Recovery Time
Tj = 150°C
220
ns
Tj = 25°C
20.3
Qrr
Reverse Recovery Charge
IF = 450A
VR = 300V
di/dt =4000A/s
Tj = 150°C
42.8
C
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT450SK60 | 550 A, 600 V, N-CHANNEL IGBT |
| APTGT600A60 | 500 A, 600 V, N-CHANNEL IGBT |
| APTGT600A60 | 500 A, 600 V, N-CHANNEL IGBT |
| APTGT600DA60 | 500 A, 600 V, N-CHANNEL IGBT |
| APTGT600DA60 | 500 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT450SK60G | 功能描述:IGBT 600V 550A 1750W SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT50A1202G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGT50A120D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
| APTGT50A120D1G | 功能描述:IGBT MOD TRENCH PHASE LEG D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT50A120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module |
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