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参数资料
| 型号： | APTGT50DH120T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 200K |
| 代理商： | APTGT50DH120T3G |
APTGT50DH120T3G
APT
G
T
50DH120
T
3G
–
Rev
0
Ap
ril,
2009
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
A
Tj = 25°C
1.4
1.7
2.1
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 2mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3600
Crss
Reverse Transfer Capacitance
VGE = 0V,VCE = 25V
f = 1MHz
160
pF
QG
Gate charge
VGE=±15V, IC=50A
VCE=600V
0.5
C
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
70
ns
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
90
ns
Eon
Turn-on Switching Energy
Tj = 125°C
5
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
Tj = 125°C
5.5
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤ 10s ; Tj = 125°C
200
A
Diode ratings and characteristics (CR2 & CR3)
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
50
A
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 50A
Tj = 125°C
1.6
V
Tj = 25°C
170
trr
Reverse Recovery Time
Tj = 125°C
280
ns
Tj = 25°C
5.6
Qrr
Reverse Recovery Charge
Tj = 125°C
9.9
C
Tj = 25°C
2.2
Er
Reverse Recovery Energy
IF = 50A
VR = 600V
di/dt =1900A/s
Tj = 125°C
4.1
mJ
CR1 & CR4 are IGBT protection diodes only
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT50DH120TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT50DH170T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
| APTGT50DH170TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT50DH60T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
| APTGT50DH60TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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