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参数资料
| 型号： | APTGT50DSK120T3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Dual Buck chopper Trench IGBT Power Module |
| 中文描述： | 双降压斩波沟道IGBT功率模块 |
| 文件页数： | 2/5页 |
| 文件大小： | 299K |
| 代理商： | APTGT50DSK120T3 |
APTGT50DSK120T3
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 2mA
V
GE
= 0V, V
CE
= 1200V
V
GE
=15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 2mA
V
GE
= 20V, V
CE
= 0V
Min
1200
1.4
5.0
Typ
1.7
2.0
5.8
Max
5
2.1
6.5
400
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
rss
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
X
E
off
Turn-off Switching Energy
Y
X
E
on
includes diode reverse recovery
Y
In accordance with JEDEC standard JESD24-1
Diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
V
GE
= 0V,V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
Min
Typ
3600
160
90
30
420
70
90
50
520
90
5
5.5
Max
Unit
pF
ns
ns
mJ
Test Conditions
Min
1200
Typ
60
2
2.3
1.8
Max
250
500
2.5
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 70°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 60A
I
F
= 120A
I
F
= 60A
A
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
400
t
rr
Reverse Recovery Time
470
1200
4000
ns
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 800V
di/dt =200A/μs
nC
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT50DSK60T3 | Dual Buck chopper Trench + Field Stop IGBT Power Module |
| APTGT50DU120T | Dual common source Fast Trench + Field Stop IGBT Power Module |
| APTGT50DU170T | Dual common source Trench + Field Stop IGBT Power Module |
| APTGT50H120T3 | Full - Bridge Trench IGBT Power Module |
| APTGT50H120T | Full - Bridge Fast Trench + Field Stop IGBT Power Module |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT50DSK120T3G | 功能描述:IGBT MOD TRENCH DL BUCK CHOP SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT50DSK60T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Buck chopper Trench + Field Stop IGBT Power Module |
| APTGT50DSK60T3G | 功能描述:IGBT MOD TRENCH DL BUCK CHOP SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT50DU120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source Fast Trench + Field Stop IGBT Power Module |
| APTGT50DU120TG | 功能描述:IGBT MOD TRENCH DUAL SOURCE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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