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参数资料
| 型号： | APTGT50X170BTP3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 70 A, 1700 V, N-CHANNEL IGBT |
| 封装： | MODULE-35 |
| 文件页数： | 3/4页 |
| 文件大小： | 269K |
| 代理商： | APTGT50X170BTP3 |
APTGT50X170RTP3
APTGT50X170BTP3
A
PT
G
T
50
X
17
0B
T
P3
–
R
ev
1,
Fe
br
ua
ry
,
20
04
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 2.5mA
1700
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
2.0
2.4
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 2.5mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Cies
Input Capacitance
4400
Crss
Reverse Transfer Capacitance
VGE = 0V ;VCE = 25V
f = 1MHz
150
pF
Td(on)
Turn-on Delay Time
200
Tr
Rise Time
90
Td(off)
Turn-off Delay Time
720
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 50A
RG = 22
90
ns
Td(on)
Turn-on Delay Time
220
Tr
Rise Time
90
Td(off)
Turn-off Delay Time
820
Tf
Fall Time
110
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 50A
RG = 22
22
mJ
Tj = 25°C
1.8
2.2
VF
Forward Voltage
VGE = 0V
IF = 50A
Tj = 125°C
1.9
V
Tj = 25°C
19
Qrr
Reverse Recovery Charge
IF = 50A
VR = 900V
di/dt=990A/s
Tj = 125°C
30
C
IGBT
0.40
RthJC
Junction to Case
Diode
0.70
°C/W
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
3. Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3.3
N.m
Wt
Package Weight
300
g
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT50X170RTP3 | 70 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X60T3G | 80 A, 600 V, N-CHANNEL IGBT |
| APTGT600DU60 | 500 A, 600 V, N-CHANNEL IGBT |
| APTGT600DU60 | 500 A, 600 V, N-CHANNEL IGBT |
| APTGT600U120D4G | 880 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT50X170BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X170RTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170TRPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X60T3G | 功能描述:IGBT TRENCH 3PHASE BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT580U60D4G | 功能描述:IGBT 600V 760A 1600W D4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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