- 您现在的位置：买卖IC网 > PDF目录36738 > APTM08TDUM04P 120 A, 75 V, 0.004 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM08TDUM04P |
| 元件分类： | JFETs |
| 英文描述： | 120 A, 75 V, 0.004 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-21 |
| 文件页数： | 2/6页 |
| 文件大小： | 308K |
| 代理商： | APTM08TDUM04P |
APTM08TDUM04P
A
P
T
M
08T
D
U
M
04P
–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1mA
75
V
VGS = 0V,VDS = 75V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 60V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 60A
04
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4530
Coss
Output Capacitance
1080
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
450
pF
Qg
Total gate Charge
153
Qgs
Gate – Source Charge
25
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 60V
ID =120A
82
nC
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 40V
ID = 120A
RG = 5
65
ns
Eon
Turn-on Switching Energy
290
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 40V
ID = 120A, RG = 5
317
J
Eon
Turn-on Switching Energy
319
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 40V
ID = 120A, RG = 5
336
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
120
IS
Continuous Source current
(Body diode)
Tc = 80°C
90
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 120A
1.3
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
100
200
ns
Qrr
Reverse Recovery Charge
IS = - 120A
VR = 40V
diS/dt = 100A/s
Tj = 25°C
300
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 120A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
相关PDF资料 |
PDF描述 |
|---|---|
| APTM100A13D | 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A13D | 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A13SC | 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A13SC | 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A18FT | 43 A, 1000 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM08TDUM04PG | 功能描述:MOSFET MOD TRIPLE DUAL SRC SP6-P RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM100A12STG | 功能描述:MOSFET PHASE LEG SCHTKY/PAR LP8W RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM100A13D | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg with Series diodes MOSFET Power Module |
| APTM100A13DG | 功能描述:MOSFET PHASE LEG SERIES DIO SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM100A13SCG | 功能描述:PWR MODULE MOSFET 1000V 65A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
发布紧急采购，3分钟左右您将得到回复。