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参数资料
| 型号： | APTM100A13D |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 6/6页 |
| 文件大小： | 297K |
| 代理商： | APTM100A13D |
APTM100A13D
A
P
T
M
100A
13D
–
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 - 6
Delay Times vs Current
td(on)
td(off)
0
10
20
30
40
50
60
20
30
40
50
60
70
80
90 100
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=667V
RG=0.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
20
30
40
50
60
70
80
90 100
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=667V
RG=0.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
7
8
20 30 40 50 60 70 80 90 100
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
VDS=667V
RG=0.5
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
6
01
2345
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
Switching Energy vs Gate Resistance
VDS=667V
ID=65A
TJ=125°C
L=100H
Hard
switching
ZCS
0
50
100
150
200
250
300
10
20
30
40
50
60
ID, Drain Current (A)
F
req
u
e
n
cy
(
k
H
z)
Operating Frequency vs Drain Current
VDS=667V
D=50%
RG=0.5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4 0.60.8
1
1.2 1.41.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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