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参数资料
| 型号： | APTM100A13SC |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 6/6页 |
| 文件大小： | 313K |
| 代理商： | APTM100A13SC |
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APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
25
50
75
100 125 150 175 200
ID, Drain Current (A)
t d(
o
n)
an
d
t
d(o
ff)
(n
s
)
VDS=40V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
25
50
75
100 125 150 175 200
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=40V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.25
0.5
0.75
25
50
75
100 125 150 175 200
ID, Drain Current (A)
E
on
a
nd
E
of
f(m
J
)
VDS=40V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
0
10
2030
405060
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=40V
ID=120A
TJ=125°C
L=100H
Hard
switching
ZVS
ZCS
0
50
100
150
200
250
300
20
40
60
80
100
120
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=40V
D=50%
RG=5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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