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参数资料
| 型号： | APTM100A23SCT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 239K |
| 代理商： | APTM100A23SCT |
APTM100A23SCT
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APT website – http://www.advancedpower.com
1 - 4
NTC2
S1
OUT
NTC1
VBUS
0/VBUS
G2
S2
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
36
ID
Continuous Drain Current
Tc = 80°C
27
IDM
Pulsed Drain current
144
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
230
m
PD
Maximum Power Dissipation
Tc = 25°C
694
W
IAR
Avalanche current (repetitive and non repetitive)
18
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 1000V
RDSon = 230m
max @ Tj = 25°C
ID = 36A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
Parallel SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Phase leg
Series & SiC parallel diodes
MOSFET Power Module
相关PDF资料 |
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| APTM100A23STG | 36 A, 1000 V, 0.27 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM100A23ST | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A40FT1G | 21 A, 1000 V, 0.48 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100DA18T | 43 A, 1000 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET |
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