参数资料
型号: APTM100A46FT1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 19 A, 1000 V, 0.552 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SP1, 12 PIN
文件页数: 5/5页
文件大小: 139K
代理商: APTM100A46FT1G
APTM100A46FT1G
APT
M
100A46FT
1
G
Rev
0
Decem
b
er
,2007
www.microsemi.com
5 – 5
TJ=25°C
TJ=125°C
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Source to Drain Voltage (V)
I SD
,Reverse
Drai
n
Cu
rrent
(A)
Drain Current vs Source to Drain Voltage
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
erm
a
lI
m
pedance
(°C/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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