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参数资料
| 型号： | APTM100DA33T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 23 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 145K |
| 代理商： | APTM100DA33T1G |
APTM100DA33T1G
APT
M
100DA33T1G
–
Rev
0
Decem
ber,
2007
www.microsemi.com
5 – 5
Typical Diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
erm
a
lI
m
p
e
dan
ce
(°
C/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
20
40
60
80
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
I F
,Fo
rwar
d
C
u
rren
t(A)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
15 A
30 A
45 A
0
100
200
300
400
500
0
200
400
600
800
1000 1200
-diF/dt (A/s)
t rr
,
R
ever
se
Recover
y
T
im
e
(ns)
TJ=125°C
VR=800V
QRR vs. Current Rate Charge
15 A
30 A
45 A
0
1
2
3
4
0
200
400
600
800
1000 1200
-diF/dt (A/s)
Q
RR
,
Reverse
R
eco
very
C
h
arge
(
C)
TJ=125°C
VR=800V
IRRM vs. Current Rate of Charge
15 A
30 A
45 A
0
5
10
15
20
25
30
0
200
400
600
800
1000 1200
-diF/dt (A/s)
I RRM
,
Reverse
R
eco
very
C
u
rr
ent
(A
)
TJ=125°C
VR=800V
Capacitance vs. Reverse Voltage
0
40
80
120
160
200
1
10
100
1000
VR, Reverse Voltage (V)
C,
Capaci
tance
(
pF)
0
10
20
30
40
50
25
50
75
100
125
150
175
Case Temperature (C)
I F
(A
V
)(A
)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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|---|---|
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