参数资料
型号: APTM100H18F
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 43 A, 1000 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: MODULE-12
文件页数: 1/6页
文件大小: 308K
代理商: APTM100H18F
APTM100H18F
A
P
T
M
100H
18F
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
S4
G4
S3
Q3
G3
G1
Q1
Q4
0/VBUS
VBUS
OU
T2
OU
T1
G2
Q2
S2
S1
S4
G4
G2
S2
VBUS
0/VBUS
S1
G1
S3
OUT1
OUT2
G3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
43
ID
Continuous Drain Current
Tc = 80°C
33
IDM
Pulsed Drain current
172
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
180
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 180m max @ Tj = 25°C
ID = 43A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Full - Bridge
MOSFET Power Module
相关PDF资料
PDF描述
APTM100H18F 43 A, 1000 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100H35FT 22 A, 1000 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100H35FT 22 A, 1000 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100H45SCT 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100H45SCT 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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