参数资料
型号: APTM100TA35FP
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 22 A, 1000 V, 0.35 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: MODULE-21
文件页数: 1/6页
文件大小: 316K
代理商: APTM100TA35FP
APTM100TA35FP
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APT website – http://www.advancedpower.com
1 – 6
W
VBUS1
VBUS2
VBUS3
0/VBUS3
V
G5
G6
S5
S6
0/VBUS1
S2
G2
G1
S1
0/VBUS2
U
S3
S4
G3
G4
S5
G5
G6
S6
VBUS 2
0/VBUS 3
VBUS 3
0/VBUS 2
W
V
G4
S4
G3
S3
VBUS 1
0/VBUS 1
S1
G1
S2
G2
U
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
22
ID
Continuous Drain Current
Tc = 80°C
17
IDM
Pulsed Drain current
88
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
350
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 350m max @ Tj = 25°C
ID = 22A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
Module can be configured as a three phase bridge
Module can be configured as a boost followed by a
full bridge
Triple phase leg
MOSFET Power Module
相关PDF资料
PDF描述
APTM100TA35FP 22 A, 1000 V, 0.35 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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