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参数资料
| 型号： | APTM100UM65S-ALN |
| 元件分类： | JFETs |
| 英文描述： | 145 A, 1000 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 2/6页 |
| 文件大小： | 311K |
| 代理商： | APTM100UM65S-ALN |
APTM100UM65S-AlN
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2005
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS= 1000V
Tj = 25°C
400
A
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
2
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 72.5A
65
78
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 20mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28.5
Coss
Output Capacitance
5.08
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.9
nF
Qg
Total gate Charge
1068
Qgs
Gate – Source Charge
136
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 145A
692
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
14
Td(off)
Turn-off Delay Time
140
Tf
Fall Time
VGS = 15V
VBus = 500V
ID = 145A
RG = 0.75
55
ns
Eon
Turn-on Switching Energy
4.8
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75
2.9
mJ
Eon
Turn-on Switching Energy
8
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75
3.9
mJ
Eon includes diode reverse recovery
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
600
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
120
A
IF = 120A
1.1
1.15
IF = 240A
1.4
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
Tj = 125°C
60
ns
Tj = 25°C
120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
500
nC
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