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参数资料
| 型号： | APTM100VDA35T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 1000 V, 0.42 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 235K |
| 代理商： | APTM100VDA35T3G |
APTM100VDA35T3G
APTM100VDA35
T
3G–
Rev
0
Septem
ber,
2009
www.microsemi.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 1000V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 11A
350
420
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5.2
Coss
Output Capacitance
0.88
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.16
nF
Qg
Total gate Charge
186
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 22A
122
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
155
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5Ω
40
ns
Eon
Turn-on Switching Energy
900
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5
623
J
Eon
Turn-on Switching Energy
1423
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5
779
J
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1000
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1000V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
40
A
IF = 40A
2.5
3
IF = 80A
3.1
VF
Diode Forward Voltage
IF = 40A
Tj = 125°C
2
V
Tj = 25°C
250
trr
Reverse Recovery Time
Tj = 125°C
310
ns
Tj = 25°C
415
Qrr
Reverse Recovery Charge
IF = 40A
VR = 667V
di/dt=200A/s
Tj = 125°C
1650
nC
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