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参数资料
| 型号： | APTM10DHM05 |
| 元件分类： | JFETs |
| 英文描述： | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-8 |
| 文件页数： | 3/6页 |
| 文件大小： | 302K |
| 代理商： | APTM10DHM05 |
APTM10DHM05
A
P
T
M
10D
H
M
05–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
3 - 6
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
transistor
0.16
RthJC
Junction to Case
diode
0.30
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
Package outline (dimensions in mm)
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相关代理商/技术参数 |
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|---|---|
| APTM10DHM05G | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM10DHM09T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
| APTM10DHM09T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - MOSFET - Bulk |
| APTM10DHM09TG | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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