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参数资料
| 型号： | APTM10DSKM09T3 |
| 元件分类： | JFETs |
| 英文描述： | 139 A, 100 V, 0.0095 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 1/6页 |
| 文件大小： | 315K |
| 代理商： | APTM10DSKM09T3 |
APTM10DSKM09T3
A
P
T
M
10D
SK
M
09T
3–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 – 6
14
13
Q1
Q2
11
18
22
7
31
29
CR2
16
R1
19
10
23
32
CR1
15
8
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
139
ID
Continuous Drain Current
Tc = 80°C
100 *
IDM
Pulsed Drain current
430
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
9.5
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 9m typ @ Tj = 25°C
ID = 139A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
Dual Buck chopper
MOSFET Power Module
相关PDF资料 |
PDF描述 |
|---|---|
| APTM10DSKM09T3 | 139 A, 100 V, 0.0095 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10DSKM19T3 | 70 A, 100 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10DSKM19T3 | 70 A, 100 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10DUM02 | 495 A, 100 V, 0.0025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10DUM02 | 495 A, 100 V, 0.0025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM10DSKM09T3G | 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM10DSKM19T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Buck chopper MOSFET Power Module |
| APTM10DSKM19T3G | 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM10DUM02 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Common Source MOSFET Power Module |
| APTM10DUM02G | 功能描述:MOSFET MOD DUAL COMMON SRC SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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