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参数资料
| 型号： | APTM10UM01FA |
| 元件分类： | JFETs |
| 英文描述： | 860 A, 100 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-5 |
| 文件页数： | 2/6页 |
| 文件大小： | 295K |
| 代理商： | APTM10UM01FA |
APTM10UM01FA
A
P
T
M
10U
M
01F
A
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 100V
Tj = 25°C
500
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
2000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 275A
1.5
1.6
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 12mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±450
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
60
Coss
Output Capacitance
3.7
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
5.9
nF
Qg
Total gate Charge
2100
Qgs
Gate – Source Charge
360
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID =550A
1080
nC
Td(on)
Turn-on Delay Time
185
Tr
Rise Time
270
Td(off)
Turn-off Delay Time
600
Tf
Fall Time
Inductive switching
VGS = 15V
VBus = 66V
ID = 550A
RG = 1
175
ns
Eon
Turn-on Switching Energy
3.3
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 550A, RG =1
3.6
mJ
Eon
Turn-on Switching Energy
3.65
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 550A, RG = 1
3.85
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
860*
IS
Continuous Source current
(Body diode)
Tc = 80°C
640*
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 550A
1.3
V
dv/dt
Peak Diode Recovery
5
V/ns
Tj = 25°C
190
trr
Reverse Recovery Time
IS = - 550A
VR = 66V
diS/dt = 600A/s
Tj = 125°C
370
ns
Tj = 25°C
2.4
Qrr
Reverse Recovery Charge
IS = - 550A
VR = 66V
diS/dt = 600A/s
Tj = 125°C
10.2
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 860A
di/dt
≤ 600A/s
VR ≤ VDSS
Tj ≤ 150°C
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