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参数资料
| 型号： | APTM120A20D |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 1/6页 |
| 文件大小： | 299K |
| 代理商： | APTM120A20D |
APTM120A20D
A
P
T
M
120U
20D
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
50
ID
Continuous Drain Current
Tc = 80°C
37
IDM
Pulsed Drain current
200
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
200
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
12
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 1200V
RDSon = 200m max @ Tj = 25°C
ID = 50A @ Tc = 25°C
Application
Zero Current Switching resonant mode
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Phase leg
with Series diodes
MOSFET Power Module
相关PDF资料 |
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| APTM120A20D | 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM120A65FT1G | 16 A, 1200 V, 0.78 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
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